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| SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS * * * * * * 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 200 A Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Notes: 1. 2. 3. 4. 5. These values apply when the gate-cathode resistance RGK = 1k These values apply for continuous dc operation with resistive load. Above 80C derate linearly to zero at 110C. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80C derate linearly to zero at 110C. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. This value applies for a maximum averaging time of 20 ms. Page 1 of 3 Symbol Ratings B C Unit M S N V V A A A A W W C C C D E Repetitive peak off-state voltage 100 200 300 400 500 600 700 800 (see Note1) Repetitive peak reverse voltage 100 200 300 400 500 600 700 800 Continuous on-state current at (or below) 5 80C case temperature (see note2) Average on-state current (180 conduction angle) at(or below) 80C case temperature 3.2 (see Note3) Surge on-state current (see Note4) 30 Peak positive gate current (pulse width 0.2 300 s) Peak power dissipation (pulse width 300 1.3 s) Average gate power dissipation (see 0.3 Note5) Operating case temperature range -40 to +110 Storage temperature range -40 to +125 Lead temperature 1.6 mm from case for 10 230 seconds SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S THERMAL CHARACTERISTICS Symbol tgt tq RJC RJA Gate-controlled Turn-on time Circuit-communicated Turn-off time Ratings VAA = 30 V, RL = 6 , RGK(eff) = 5 k, Vin = 50 V VAA = 30 V, RL = 6 , IRM 8 A Value 1.75 s 7.7 3.5 62.5 C/W Unit ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol IDRM IRRM IGT Ratings Repetitive peak off-state current Repetitive peak reverse current Gate trigger current Test Condition(s) VD = Rated VDRM, RGK = 1 k, TC = 110C VR = Rated VRRM, IG = 0, TC = 110C VAA = 6 V, RL = 100 , tp(g) 20s VAA = 6 V, RL = 100 , RGK = 1 k, tp(g) 20s, TC = -40C VAA = 6 V, RL = 100 , RGK = 1 k, tp(g) 20s, VAA = 6 V, RL = 100 , RGK = 1 k, tp(g) 20s, TC = 110C VAA = 6 V, RGK = 1 k, initiating IT = 10 mA VAA = 6 V, RGK = 1 k, initiating IT = 10 mA, TC = -40C ITM = 5A (see Note6) VD = Rated VD, RGK = 1 k, TC = 110C Min Typ Mx Unit 0.4 0.2 60 0.6 10 400 1 200 1.2 1 5 mA 8 1.7 V V/s V A mA A VGT Gate trigger voltage IH Holding current VTM dv/dt Peak on-state voltage Critical rate of rise of off-state voltage Note 6: This parameters must be measured using pulse techniques, tW = 300s, duty cycle 2 %, voltage-sensing contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch) from de device body. Page 2 of 3 SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S MECHANICAL DATA CASE TO-220 Pin 1 : Pin 2 : Pin 3 : kathode Anode Gate Page 3 of 3 |
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